Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry

Hock-Chun Chin; Moh-Lung Ling; Bin Liu; Xingui Zhang; Jie Li; Yongdong Liu; Jiangtao Hu; Yee-Chia Yeo

doi:10.1117/12.2013413

10 April 2013 Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry

Hock-Chun Chin, Moh-Lung Ling, Bin Liu, Xingui Zhang, Jie Li, Yongdong Liu, Jiangtao Hu, Yee-Chia Yeo

Author Affiliations +

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86813D (2013) https://doi.org/10.1117/12.2013413
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

In this work, we report the first demonstration of scatterometry Optical Critical Dimension (OCD) characterization on advanced Ge Multi-Gate Field-Effect Transistor (MuGFET) or FinFET formed on a Germanium-on-Insulator (GeOI) substrate. Two critical process steps in the Ge MuGFET process flow were investigated, i.e. after Ge Fin formation, and after TaN gate stack etching process. All key process variations in the test structures were successfully monitored by the floating or fitting parameters in the OCD models. In addition, excellent static repeatability, with 3σ lower than 0.12 nm, was also achieved. The measurement results from OCD were also compared with both Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) measurements. Excellent correlation with both SEM and TEM was achieved by employing OCD characterization, confirming scatterometry OCD as a promising metrology technique for next generation multi-gate transistor with an advanced channel material.

Citation Download Citation

Hock-Chun Chin, Moh-Lung Ling, Bin Liu, Xingui Zhang, Jie Li, Yongdong Liu, Jiangtao Hu, and Yee-Chia Yeo "Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813D (10 April 2013); https://doi.org/10.1117/12.2013413

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available