10 April 2013 Performance-based metrology of critical device performance parameters for in-line non-contact high-density intra-die monitor/control on a 32nm SOI advanced logic product platform
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Abstract
We report a strong direct correlation (above 0.9) between conventional transistor-level parametrics typically used in the industry to monitor and control intra-die variability (IDV) and a novel, non-contact performance-based metrology (PBM), technology that was integrated into an active die on a 32nm SOI advanced logic product platform. We demonstrate a PBM test structure measurement repeatability of less than 0.4%. In this work, we also demonstrate the compatibility of integrating the PBM technology into an advanced CMOS process flow with no added processing or steps, as well as its footprint scalability. The data suggests that the non-contact PBM technology meets all prerequisites for its deployment as a standard, within-product IDV monitor.
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Mario M. Pelella, Mario M. Pelella, Anda C. Mocuta, Anda C. Mocuta, Birk Lee, Birk Lee, Noah Zamdmer, Noah Zamdmer, Dustin K. Slisher, Dustin K. Slisher, Xiaojun Yu, Xiaojun Yu, James S. Vickers, James S. Vickers, Yota Tsuruta, Yota Tsuruta, Subramanian S. Iyer, Subramanian S. Iyer, Nader Pakdaman, Nader Pakdaman, } "Performance-based metrology of critical device performance parameters for in-line non-contact high-density intra-die monitor/control on a 32nm SOI advanced logic product platform", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813F (10 April 2013); doi: 10.1117/12.2025869; https://doi.org/10.1117/12.2025869
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