EUV source power and resist photospeed will dictate the throughput of EUV lithography, and throughput is a key factor in the cost of ownership of EUVL as a technology. However, low exposure doses typically lead to poor CD uniformity (CDU) and line-width roughness (LWR). In this paper, we simulate the CDU versus dose-to-size trade-off for a large number of virtual photoresists using PROLITH for 28nm, 26nm, and 22nm HP contacts. The resulting CDU versus dose curve is very similar to the experimental investigations by Naulleau et al. (Proc. SPIE, v7972, 2011) and by Goethals et al. (EUVL Symposium 2012). With the simulated results, we can investigate trends with physical properties such as diffusivity of acid and quencher, and overall exposure yield, as well as formulation properties such as PAG and quencher loadings, and conventional versus photodecomposable quencher.