29 March 2013 The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL
Author Affiliations +
EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL. Especially, concerning about deterioration of the patterning performance by Out-of-Band (OoB) light existing in the EUV light, and contamination problem of exposure tool due to the resist outgassing are the key issues which have to be resolved in the material view point toward the high volume manufacturing by EUVL. This paper proposes the solution for these critical issues by applying the top coat material. The key characteristics for top coat material are the protection of the OoB effect, the prevention of the outgassing from resist as a barrier layer and enhancement of photo resist performance, like resist profile and process window. This paper describes the material design and performance. The optical property needs having the high absorbance of DUV light in OoB range and high transmittance for 13.5nm wavelength. Outgassing barrier property needs high broking property against non contamination chemical species from photo resist outgassing. The study of TOF-SIMS analysis indicates how much the polymer chemistry can impact for outgassing barrier property. The dependency of material design and lithography performance is also discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noriaki Fujitani, Noriaki Fujitani, Rikimaru Sakamoto, Rikimaru Sakamoto, Takafumi Endo, Takafumi Endo, Ryuji Onishi, Ryuji Onishi, Tokio Nishita, Tokio Nishita, Hiroaki Yaguchi, Hiroaki Yaguchi, Bang-Ching Ho, Bang-Ching Ho, } "The novel solution for negative impact of out-of-band and outgassing by top coat materials in EUVL", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868209 (29 March 2013); doi: 10.1117/12.2011489; https://doi.org/10.1117/12.2011489


Back to Top