29 March 2013 Rectification of EUV-patterned contact holes using directed self-assembly
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One critical problem with EUV patterning is the local CD variation of contact holes. The issue is especially problematic for patterning of sub-30nm hole dimensions. Although the EUV wavelength enables resolution of fine contact patterns, shot noise effects (both chemical and optical) result in high levels of CD non-uniformity. Directed self-assembly (DSA) offers the possibility of rectifying this non-uniformity. Since the resulting CD in this patterning approach is typically dictated by the polymer size, application of this technology in conjunction with an EUV-defined pre-pattern can theoretically improve the local CD uniformity. Integration approaches using both chemo- and grapho-epitaxy integration may be used to achieve DSA enabled uniformity improvement. The drawbacks and benefits of both approaches will be discussed. Finally, these types of DSA flows also enable frequency multiplication to achieve dense arrays from an initially sparse pattern. In this study, we will report on a variety of schemes to attain rectification and frequency multiplication.
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Roel Gronheid, Roel Gronheid, Arjun Singh, Arjun Singh, Todd R. Younkin, Todd R. Younkin, Paulina Rincon Delgadillo, Paulina Rincon Delgadillo, Paul Nealey, Paul Nealey, Boon Teik Chan, Boon Teik Chan, Kathleen Nafus, Kathleen Nafus, Ainhoa Romo Negreira, Ainhoa Romo Negreira, Mark Somervell, Mark Somervell, "Rectification of EUV-patterned contact holes using directed self-assembly", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820A (29 March 2013); doi: 10.1117/12.2012667; https://doi.org/10.1117/12.2012667

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