Novel EUV resist materials and process for 20nm half pitch and beyond

Ken Maruyama; Ramakrishnan Ayothi; Yoshi Hishiro; Koji Inukai; Motohiro Shiratani; Tooru Kimura

doi:10.1117/12.2011243

29 March 2013 Novel EUV resist materials and process for 20nm half pitch and beyond

Ken Maruyama, Ramakrishnan Ayothi, Yoshi Hishiro, Koji Inukai, Motohiro Shiratani, Tooru Kimura

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86820B (2013) https://doi.org/10.1117/12.2011243
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

New resist, under layer, and topcoat materials specific to EUVL was developed and investigated for sub 20 nm hp patterning performance. High Tg resin and high absorption resin were developed and incorporated in to EUV resist. EUV resist including high Tg resin showed good LWR and local CD uniformity (LCDU). EUV resist containing high absorption resin showed higher resist sensitivity. New silicon type under-layer materials with different hydrophobicity were developed for further patterning performance improvement. Silicon type under-layer material with higher hydrophobic surface property improved line collapse margin which in turn improved resist resolution. EUV top-coat material was developed and examined for EUV resist sensitivity to out of band (OOB) radiation. EUV top-coat suppressed OOB influence and improved lithographic performance. EUV resist containing new materials resolved 15 nm half pitch lines and spaces and 20 nm contact hole patterns.

Citation Download Citation

Ken Maruyama, Ramakrishnan Ayothi, Yoshi Hishiro, Koji Inukai, Motohiro Shiratani, and Tooru Kimura "Novel EUV resist materials and process for 20nm half pitch and beyond", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820B (29 March 2013); https://doi.org/10.1117/12.2011243

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