29 March 2013 Process variability of self-aligned multiple patterning
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EUV lithography is one of the most promising techniques for sub 20nm half pitch HVM devices, however it is well known that EUV lithography solutions still face significant challenges. Therefore we have focused on 193 based self-aligned multiple patterning, because SAMP(SADP to SAQP) easily enables fine periodical patterning. As you know, these spacer based techniques have already been applied to NAND,DRAM,Logic mass productions. We have already introduced innovative resist core based SADP/SAQP techniques and have demonstrated results in past SPIE sessions.[1][2][3][4] Although SAMP technique can be easily extend to the gridded pattern for 1D layout, the resolution limit of gridded design rule will strongly depend on hole pitch shrink technique for the cut-pattern. In this paper, we will introduce GDR demonstration result of the 10nm logic node, and discuss about the process variability relevant to them.
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Kenichi Oyama, Kenichi Oyama, Shohei Yamauchi, Shohei Yamauchi, Arisa Hara, Arisa Hara, Sakurako Natori, Sakurako Natori, Hidetami Yaegashi, Hidetami Yaegashi, "Process variability of self-aligned multiple patterning", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820C (29 March 2013); doi: 10.1117/12.2011385; https://doi.org/10.1117/12.2011385

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