Paper
29 March 2013 Feasibility study of resist slimming for SIT
Author Affiliations +
Abstract
Wet chemical slimming of resist can enable a resist mandrel for sidewall-image transfer (SIT) by decreasing the mandrel width and smoothing the mandrel sidewalls. This would reduce the cost of the SIT process. Several key metrics are used to compare the traditional etched mandrel and the slimmed resist mandrel, including: process window, critical dimension uniformity, and defectivity. New resists are shown to have larger process windows after slimming than an etched mandrel process while maintaining comparable critical dimension uniformity. The major challenge to the resist mandrel is the profile post-slim.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicole Saulnier, Chiew-seng Koay, Matthew Colburn, David Hetzer, Michael Cicoria, and Jonathan Ludwicki "Feasibility study of resist slimming for SIT", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820E (29 March 2013); https://doi.org/10.1117/12.2011506
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Etching

Lithography

Photoresist processing

Critical dimension metrology

Semiconducting wafers

Line width roughness

Line edge roughness

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