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29 March 2013 Advances in directed self assembly integration and manufacturability at 300 mm
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Abstract
Directed self-assembly (DSA) has the potential to extend scaling for both line/space and hole patterns. DSA has shown the capability for pitch reduction (multiplication), hole shrinks, CD self-healing as well as a pathway towards LWR and pattern collapse improvement [1-10]. TEL has developed a DSA development ecosystem (collaboration with customers, consortia, inspection vendors and material suppliers) to successfully demonstrate directed PS-PMMA DSA patterns using chemo-epitaxy (lift-off and etch guide) and grapho-epitaxy integrations on 300 mm wafers. New processes are being developed to simplify process integration, to reduce defects and to address design integration challenges with the long term goal of robust manufacturability. For hole DSA applications, a wet development process has been developed that enables traditional post-develop metrology through the high selectivity removal of PMMA cylindrical cores. For line/ space DSA applications, new track, cleans and etch processes have been developed to improve manufacturability. In collaboration with universities and consortia, fundamental process studies and simulations are used to drive process improvement and defect investigation. To extend DSA resolution beyond a PS-PMMA system, high chi materials and processes are also explored. In this paper, TEL’s latest process solutions for both hole and line/space DSA process integrations are presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamen Rathsack, Mark Somervell, Makato Muramatsu, Keiji Tanouchi, Takahiro Kitano, Eiichi Nishimura, Koichi Yatsuda, Seiji Nagahara, Hiroyuki Iwaki, Keiji Akai, Mariko Ozawa, Ainhoa Romo Negreira, Shigeru Tahara, and Kathleen Nafus "Advances in directed self assembly integration and manufacturability at 300 mm", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820K (29 March 2013); https://doi.org/10.1117/12.2012018
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