Process development of the EUVL negative-tone imaging at EIDEC

Toshiya Takahashi; Ryuji Onishi; Toshiro Itani

doi:10.1117/12.2011356

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29 March 2013 Process development of the EUVL negative-tone imaging at EIDEC

Toshiya Takahashi, Ryuji Onishi, Toshiro Itani

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Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86820M (2013) https://doi.org/10.1117/12.2011356
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Underlayer and resist materials were investigated for negative-tone development (NTD) using extreme ultraviolet (EUV) lithography. NTD-compatible underlayers reduced the pattern collapse observed in preliminary NTD evaluations. An NTD resist with higher activation energy (Ea) deprotecting groups or higher glass transition temperature (Tg) polymer improved the resolution and line width roughness (LWR). The improvements provided by the combination of underlayer and resist materials with respect to NTD, ultimate resolution, and trench patterning were evaluated. In addition, we studied the dissolution characteristics by comparing negative-tone and positive-tone resists to achieve a fundamental understanding of their characteristics.

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Toshiya Takahashi, Ryuji Onishi, and Toshiro Itani "Process development of the EUVL negative-tone imaging at EIDEC", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820M (29 March 2013); https://doi.org/10.1117/12.2011356

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