29 March 2013 Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
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Abstract
Here, we report the highest recorded resolution for a negative-tone, carbon-based, chemically amplified (CA) resist of 20 nm half-pitch (HP) using both E-beam and EUV exposure systems. The new chemistry incorporates variable amounts of oxetane (0, 5, 10 and 20%) cross-linker into a base of Noria-MAd (methyl-admantane) molecular resist. Cross-linkable resists showed simultaneous improvements in surface energy, structural integrity, and swelling to ensure collapse free 20nm HP patterns and line-edge roughness (LER) down to 2.3 nm. EUV exposed Noria-Ox (5%) cross-linked resist patterns demonstrated 5 times improvement in Z-factor (for 24 nm HP) over Noria-MAd alone.
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Prashant K. Kulshreshtha, Prashant K. Kulshreshtha, Ken Maruyama, Ken Maruyama, Sara Kiani, Sara Kiani, Scott Dhuey, Scott Dhuey, Pradeep Perera, Pradeep Perera, James Blackwell, James Blackwell, Deirdre Olynick, Deirdre Olynick, Paul D. Ashby, Paul D. Ashby, } "Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820N (29 March 2013); doi: 10.1117/12.2011640; https://doi.org/10.1117/12.2011640
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