16 April 2013 Development of KrF hybrid resist for a dual-isolation application
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As an option to traditional positive or negative photoresist, hybrid resist has been developed to provide an alternative way to create small trench features, at the range of 20-60 nm, by generating with a single expose, with both positive and negative responses to TMAH developer in one resist layer. [1] Here we report the design and development of a series of frequency-doubling KrF hybrid resists for an Extremely Thin Silicon on Insulator (ETSOI) dual-isolation application for 20 nm node and beyond. The resist formulations were optimized in terms of photo-acid generators (PAGs), PAG loading level and polymers. The resulting KrF hybrid resists are compatible with conventional KrF lithography processes, including conventional illumination, binary masks and 0.26 N TMAH developer, to afford a spacewidth of 20-60 nm. The space CD can be controlled by means of formulation and process options, but is insensitive to expose dose and mask CD. On integrated wafers, the hybrid resists have demonstrated good lithography performance, including through-pitch CD uniformity, focus/expose process window, profile, LER and RIE behavior. This hybrid resist process has been used to fabricate initial development structures for high performance dual-isolation ETSOI devices.
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Sen Liu, Sen Liu, Steven Holmes, Steven Holmes, Kuang Jung Chen, Kuang Jung Chen, Wu-song Huang, Wu-song Huang, Ranee Kwong, Ranee Kwong, Greg Breyta, Greg Breyta, Bruce Doris, Bruce Doris, Kangguo Cheng, Kangguo Cheng, Scott Luning, Scott Luning, Maud Vinet, Maud Vinet, Laurent Grenouillet, Laurent Grenouillet, Qing Liu, Qing Liu, Matt Colburn, Matt Colburn, Chung-Hsi Wu, Chung-Hsi Wu, } "Development of KrF hybrid resist for a dual-isolation application", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820T (16 April 2013); doi: 10.1117/12.2011515; https://doi.org/10.1117/12.2011515


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