Translator Disclaimer
Paper
29 March 2013 Advanced electron beam resist requirements and challenges
Author Affiliations +
Abstract
Electron beam resists are critical to photomask production and have significant impacts on advanced semiconductor manufacturing. In this paper, we’ll discuss current and future challenges in electron beam resist development. These materials face many of the same issues as EUV resists, especially in their tradeoffs between resolution, dose and LER. However, electron beam exposure creates unique complications associated with backscattered electrons and charging. We’ll investigate these effects and the requirements and challenges that result.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Jamieson, Bennett Olson, Maiying Lu, and Nathan Wilcox "Advanced electron beam resist requirements and challenges", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820Y (29 March 2013); https://doi.org/10.1117/12.2014527
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Writing time estimation of EB mask writer EBM 9000 for...
Proceedings of SPIE (October 17 2014)
7-nm e-beam resist sensitivity characterization
Proceedings of SPIE (October 04 2016)
Electron beam mask writer EBM 9500 for logic 7nm node...
Proceedings of SPIE (October 25 2016)
Electron Beam Lithography For Maskmaking
Proceedings of SPIE (July 17 1979)
Advanced electron beam resist requirements and challenges
Proceedings of SPIE (October 13 2011)

Back to Top