Photoresists play a key role in enabling the patterning process, and the development of their chemistry has contributed significantly to the industry’s ability to continue shrinking device dimensions. However, with the increasing complexity of patterning ever smaller features, photoresist performance needs to be supported by a large number of materials, such as antireflective coatings and anti-collapse rinses. Bottom anti-reflective coatings are widely used to control reflectivity-driven pattern fidelity in i-line and DUV exposures. While no such reflectivity control is required at EUV wavelengths, it has been demonstrated that use of an EUV underlayer (EBL) coating with high EUV photon absorption (EPA) unit can improve resist performance such as sensitivity and resist-substrate poisoning, thereby improving resolution and process window. EBL can also help to reduce the effect of out-of-band (OoB) irradiation. Traditionally, final photoresist image cleaning after the develop step has been performed using de-ionized water, generally known as a “rinse step”. More recently pattern collapse has developed to a major failure mode in high resolution lithography attributed to strong capillary forces induced by water resulting in pattern bending (‘pattern sticking’) or adhesion failure. With decreasing feature geometries (DPT immersion lithography, EUV) the benefit of rinse solutions to prevent pattern collapse has increased. In addition such rinse solutions can in some cases improve defects and LWR. In this paper we describe the advantages of AZ® EBL series of EUV underlayer materials and EUV FIRM® EXTREME™ rinse solutions when applied individually and in combinations. It is demonstrated that the use of underlayer materials can help improve LWR through improvement of resist profiles. Use of FIRM® EXTREME™ rinse is shown to provide significant improvement in collapse margin and total defect counts.