29 March 2013 Process requirement of self-aligned multiple patterning
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Abstract
EUV lithography is one of the most promising techniques for the advanced patterning, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 based self-aligned multiple patterning, because SAMP(SADP to SAQP) easily enables fine periodical patterning. As you know, current EUVL cannot satisfy enough resolution for sub 10nm hp critical patterning. We have already introduced innovative 193 based SADP/SAQP techniques and have demonstrated results in past SPIE sessions.[1][2][3][4] we will recommend the dry cleaning technique for the pattern collapse issue of 2nd core formation. On the other hand, we have to assume the possibility of EUV+SADP in order to interpolate the EUV resolution limit. In this paper, we will discuss about the requirement process factors of 193+SAQP and EUV+SADP.
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Sakurako Natori, Shohei Yamauchi, Arisa Hara, Masatoshi Yamato, Kenichi Oyama, Hidetami Yaegashi, "Process requirement of self-aligned multiple patterning", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821F (29 March 2013); doi: 10.1117/12.2011398; https://doi.org/10.1117/12.2011398
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