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29 March 2013 Strategy for yield improvement with sub-10nm photochemical filtration
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Process and equipment engineers are always seeking ways to improve yield quickly and efficiently, especially on newly developing processes. These engineers have many tools at their disposal – equipment enhancements, software upgrades, and materials improvements. Many of these tools come from OEMs (other equipment suppliers) and materials suppliers who all benefit from close collaboration with IDMs to improve yield. This paper will discuss the strategies utilized to improve yield on 32 nm BEOL (back end of line) lithography processes with sub-10 nm photochemical filtration. This collaboration generated electrical yield data that validated the performance of several sub-10 nm photochemical filters on various resist and ancillary chemicals used in a tri-layer stack. Examples of yield enhancement include the use of 5 nm UPE (ultra high molecular weight polyethylene) in OPL (optical planarizing layers) which showed a 69% improvement in overall median yield for an OPL material used in the first metallization layer, and a 26% improvement for a second OPL material used in subsequent metallization processes . In addition, this paper will present data studying pre-wetting of a 5 nm point-of-use filter before track installation. Building on the success of this collaboration, an example filtration roadmap is also explored to show the benefits of using advanced filtration in 32 nm technologies and beyond.
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J. Braggin, C. Brodsky, M. Linnane, and P. Klymko "Strategy for yield improvement with sub-10nm photochemical filtration", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868229 (29 March 2013);

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