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12 April 2013 The effect of mask and source complexity on source mask optimization
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More complex source and mask shapes are required to maximize the process window in low κ1 era. In simulation, the improvement can be shown well with ideal source and mask shapes. However imperfection of the source and mask can cause critical dimension (CD) errors and results in smaller process margin than expected one. In this paper, it is shown that how process margins can be improved with different source and mask complexities. Also the effect of source and mask complexities on CD errors and process margin degradation is discussed. The error source of the electron beam mask pattern generator is investigated and used for mask CD uniformity estimation with different mask complexity.
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Seung-Hune Yang, Ningning Jia, SeongBo Shim, Dmitry Vengertsev, Jungdal Choi, Ho-Kyu Kang, and Young-Chang Kim "The effect of mask and source complexity on source mask optimization", Proc. SPIE 8683, Optical Microlithography XXVI, 86830C (12 April 2013);

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