12 April 2013 Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.
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Abstract
The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.
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Jos Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, Jan Mulkens, "Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.", Proc. SPIE 8683, Optical Microlithography XXVI, 86830P (12 April 2013); doi: 10.1117/12.2011507; https://doi.org/10.1117/12.2011507
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