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12 April 2013 Grayscale lithography: 3D structuring and thickness control
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Abstract
Grayscale lithography has become a common technique for three dimensional structuring of substrates. In order to make the process useful for manufacturing of semiconductor and in particular optoelectronic devices, high reproducible and uniform final film thicknesses are required. Simulations based on a calibrated resist model are used to predict customized process parameters from pixel layout to 3d substrate patterning. Multiple, arbitrary resist heights are reached by using i-line lithography. Scalable and uniform transfer of discrete step heights into oxide are realized by multiple alternating high selective resist and oxide (MASO) etch. Requirements and limitations of reliable 3D film thickness and uniformity control within a CMOS fabrication environment are being discussed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marcel Heller, Dieter Kaiser, Maik Stegemann, Georg Holfeld, Nicoló Morgana, Jens Schneider, and Daniel Sarlette "Grayscale lithography: 3D structuring and thickness control", Proc. SPIE 8683, Optical Microlithography XXVI, 868310 (12 April 2013); https://doi.org/10.1117/12.2008847
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