12 April 2013 High power 120W ArF immersion XLR laser system for high dose applications
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Demand for increased semiconductor device performance at low cost continues to drive the requirements for shrinking the geometry of features printed on silicon wafers. Argon fluoride (ArF) excimer laser systems operating at 193 nm and producing high output power played a key role in patterning of the most advanced features for high volume deep ultraviolet (DUV) lithography over the last decade. Lithographic patterning has progressed from ArF dry to ArF immersion (ArFi) to double and multiple patterning applications, with increasingly tight requirements for the quality of light at 193 nm and improved system reliability. This drove the transition from single chamber laser systems to dual chamber systems with ring cavity amplifier architectures. We are presenting a flexible 90-120W ArFi excimer laser system, developed for high volume multiple patterning manufacturing as well as 450mm wafer applications. Light source design is based on dual-chamber architecture with ring cavity power amplifier.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Rokitski, R. Rokitski, R. Rafac, R. Rafac, J. Melchior, J. Melchior, R. Dubi, R. Dubi, J. Thornes, J. Thornes, T. Cacouris, T. Cacouris, M. Haviland, M. Haviland, D. Brown, D. Brown, "High power 120W ArF immersion XLR laser system for high dose applications", Proc. SPIE 8683, Optical Microlithography XXVI, 86831H (12 April 2013); doi: 10.1117/12.2012681; https://doi.org/10.1117/12.2012681

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