29 March 2013 Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method
Author Affiliations +
Abstract
A compact model is developed to study the fin-width roughness (FWR) induced device variability and its impacts on FinFET performance. The perturbation theory is applied to obtain the analytic solution to nonlinear Poisson’s equation by treating FWR as a small deviation/perturbation from the ideal (flat) fin boundary. High accuracy of this compact model is verified with TCAD simulations. Both model calculation and TCAD simulation results show that FWR variation significantly affects FinFET device behavior. The conventional short-channel model is inaccurate to describe the FWR effects. Several types of FWR functions are studied and important device parameters such as Vt.sat, Vt.lin, DIBL are extracted from TCAD simulations, all of which are found sensitive to FWR variation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi Cheng, Qi Cheng, Weiling Kang, Weiling Kang, Yijian Chen, Yijian Chen, } "Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method", Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 86840I (29 March 2013); doi: 10.1117/12.2011551; https://doi.org/10.1117/12.2011551
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

A TCAD approach to robust ESD design in oxide confined...
Proceedings of SPIE (February 06 2007)
GaAs MOS Structures
Proceedings of SPIE (December 11 1979)
Coupling between hot-carrier degradation modes of pMOSFETs
Proceedings of SPIE (September 10 1997)

Back to Top