Advanced Etch Technology for Nanopatterning II
Proceedings Volume 8685 is from: Logo
24-28 February 2013
San Jose, California, United States
Front Matter: Volume 8685
Proc. SPIE 8685, Front Matter: Volume 8685, 868501 (16 April 2013); doi: 10.1117/12.2028903
Litho and Plasma Etching Interaction
Proc. SPIE 8685, Extension of patterning technologies down to sub-10nm half pitch, 868503 (29 March 2013); doi: 10.1117/12.2015187
Proc. SPIE 8685, Etch correction and OPC: a look at the current state and future of etch correction, 868504 (29 March 2013); doi: 10.1117/12.2015000
Plasma/Resist Interaction and LER
Proc. SPIE 8685, Towards an integrated line edge roughness understanding: metrology, characterization, and plasma etching transfer, 868505 (29 March 2013); doi: 10.1117/12.2013918
Proc. SPIE 8685, Line edge and width roughness smoothing by plasma treatment, 868508 (29 March 2013); doi: 10.1117/12.2011488
Plasma Etching for Advanced Technology Nodes
Proc. SPIE 8685, Advanced plasma etch for the 10nm node and beyond, 86850A (29 March 2013); doi: 10.1117/12.2015189
Proc. SPIE 8685, A new method based on AFM for the study of photoresist sidewall smoothening and LER transfer during gate patterning, 86850B (29 March 2013); doi: 10.1117/12.2011554
Proc. SPIE 8685, 15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU, 86850C (29 March 2013); doi: 10.1117/12.2011586
Proc. SPIE 8685, Tall FIN formation for FINFET devices of 20nm and beyond using multi-cycles of passivation and etch processes, 86850D (29 March 2013); doi: 10.1117/12.2010685
Memory Patterning
Proc. SPIE 8685, Patterning and etch challenges for future DRAM and other high aspect ratio memory device fabrication, 86850E (29 March 2013); doi: 10.1117/12.2015286
Proc. SPIE 8685, STT MRAM patterning challenges, 86850F (29 March 2013); doi: 10.1117/12.2013602
New Plasma Sources and New Etching Technologies
Proc. SPIE 8685, Properties of RLSA microwave surface wave plasma and its applications to finFET fabrication, 86850H (29 March 2013); doi: 10.1117/12.2014367
Proc. SPIE 8685, Characterization of silicon etching in synchronized pulsed plasma, 86850J (29 March 2013); doi: 10.1117/12.2011462
Proc. SPIE 8685, Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching, 86850K (29 March 2013); doi: 10.1117/12.2010584
Emerging Patterning Technology
Proc. SPIE 8685, Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications, 86850L (29 March 2013); doi: 10.1117/12.2014259
Proc. SPIE 8685, Noble approaches on double-patterning process toward sub-15nm, 86850M (29 March 2013); doi: 10.1117/12.2011962
Proc. SPIE 8685, Double patterning with dual hard mask for 28nm node devices and below, 86850P (29 March 2013); doi: 10.1117/12.2010951
Proc. SPIE 8685, Spin-on-carbon hardmask based on fullerene derivatives for high-aspect ratio etching, 86850Q (29 March 2013); doi: 10.1117/12.2011465
Proc. SPIE 8685, Evaluating spin-on carbon materials at low temperatures for high wiggling resistance, 86850R (29 March 2013); doi: 10.1117/12.2011466
Proc. SPIE 8685, Sub-30nm TiN/Ti/HfOx pillar formed by tone reverse processes for RRAM applications, 86850S (29 March 2013); doi: 10.1117/12.2010377
Proc. SPIE 8685, Characteristics of selective PMMA etching for forming a PS mask, 86850T (29 March 2013); doi: 10.1117/12.2011071
Proc. SPIE 8685, Yield enhancement of 3D flash devices through broadband brightfield inspection of the channel hole process module, 86850U (29 March 2013); doi: 10.1117/12.2011435
Proc. SPIE 8685, Evaluation of an advanced dual hard mask stack for high resolution pattern transfer, 86850V (29 March 2013); doi: 10.1117/12.2018247
Proc. SPIE 8685, The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO2, 86850W (29 March 2013); doi: 10.1117/12.2020003
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