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29 March 2013 Towards an integrated line edge roughness understanding: metrology, characterization, and plasma etching transfer
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Line Edge Roughness (LER) is of great concern in all new generation lithographies and plays a significant role in the evaluation of the future materials and processes. However, LER studies are not limited to lithography. Metrology, device physics and recently plasma etching technology investigate complementary aspects of LER in their own terms and using their own methodologies. This means that LER is actually a multifaceted issue and its understanding and control demands an effective cooperation and integration of all the involved areas and approaches. To this end, in this paper we discuss first the importance of an advanced LER characterization methodology to bring together the lithographic approach to LER and its impact on device performance. Then, we introduce a background modeling for the pattern transfer effects on LER during plasma etching which reveals the critical role of resist LER on the quality of the printed to the substrate line after plasma etching in harmony with experimental results. The overall conclusion seems to be that the advanced characterization of the whole aspects of LER strengthens the links between lithographic LER, its transfer to the substrate after plasma etching and its effects on device operation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evangelos Gogolides, Vassilios Constantoudis, and George Kokkoris "Towards an integrated line edge roughness understanding: metrology, characterization, and plasma etching transfer", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 868505 (29 March 2013);


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