29 March 2013 Line edge and width roughness smoothing by plasma treatment
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Abstract
Smoothing effects of post-litho plasma treatment on 22nm lines and spaces are evaluated for two types of EUV photo resists. This paper shows that different plasma conditions will be required to obtain a similar or better roughness reduction as previously reported for 30 nm lines. A first screening indicates a reduction in LWR of about 10% by using a H2 plasma smoothing process. This smoothing is mainly triggered by the synergy of H2 radical and ionic species during plasma treatment. Moreover the smoothing process is highly dependent on the polymer chemistry.
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P. De Schepper, P. De Schepper, T. Hansen, T. Hansen, E. Altamirano-Sanchez, E. Altamirano-Sanchez, A. Vaglio Pret, A. Vaglio Pret, W. Boullart, W. Boullart, S. De Gendt, S. De Gendt, } "Line edge and width roughness smoothing by plasma treatment", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 868508 (29 March 2013); doi: 10.1117/12.2011488; https://doi.org/10.1117/12.2011488
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