Line edge and width roughness smoothing by plasma treatment

P. De Schepper; T. Hansen; E. Altamirano-Sanchez; A. Vaglio Pret; W. Boullart; S. De Gendt

doi:10.1117/12.2011488

29 March 2013 Line edge and width roughness smoothing by plasma treatment

P. De Schepper, T. Hansen, E. Altamirano-Sanchez, A. Vaglio Pret, W. Boullart, S. De Gendt

Author Affiliations +

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 868508 (2013) https://doi.org/10.1117/12.2011488
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Smoothing effects of post-litho plasma treatment on 22nm lines and spaces are evaluated for two types of EUV photo resists. This paper shows that different plasma conditions will be required to obtain a similar or better roughness reduction as previously reported for 30 nm lines. A first screening indicates a reduction in LWR of about 10% by using a H₂ plasma smoothing process. This smoothing is mainly triggered by the synergy of H₂ radical and ionic species during plasma treatment. Moreover the smoothing process is highly dependent on the polymer chemistry.

Citation Download Citation

P. De Schepper, T. Hansen, E. Altamirano-Sanchez, A. Vaglio Pret, W. Boullart, and S. De Gendt "Line edge and width roughness smoothing by plasma treatment", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 868508 (29 March 2013); https://doi.org/10.1117/12.2011488

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