15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU

K. Xu; L. Souriau; D. Hellin; J. Versluijs; P. Wong; D. Vangoidsenhoven; N. Vandenbroeck; H. Dekkers; X. P. Shi; J. Albert; C. L. Tan; J. Vertommen; B. Coenegrachts; I. Orain; Y. Kimura; V. Wiaux; W. Boullart

doi:10.1117/12.2011586

29 March 2013 15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU

K. Xu, L. Souriau, D. Hellin, J. Versluijs, P. Wong, D. Vangoidsenhoven, N. Vandenbroeck, H. Dekkers, X. P. Shi, J. Albert, C. L. Tan, J. Vertommen, B. Coenegrachts, I. Orain, Y. Kimura, V. Wiaux, W. Boullart

Author Affiliations +

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850C (2013) https://doi.org/10.1117/12.2011586
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

This paper discusses the approach for patterning 15nm Half Pitch (HP) structures using EUV lithography combined with Self-Aligned Double Patterning (SADP). A stack composed of a double hard mask, which allows decoupling photoresist transfer and trim, and an α-Si mandrel, which offers better mechanical properties during the mandrel and spacer patterning, is proposed. A break-down study with the patterning steps was performed to investigate the key contributors for improvement of LWR, LER and CDU, targeting integrated solutions with lithography, etch, thin film deposition, and wet cleans for selected applications. Based on the optimization of these key patterning contributors, optimum LWR, LER and CDU at 15nm HP are demonstrated.

Citation Download Citation

K. Xu, K. Xu, L. Souriau, L. Souriau, D. Hellin, D. Hellin, J. Versluijs, J. Versluijs, P. Wong, P. Wong, D. Vangoidsenhoven, D. Vangoidsenhoven, N. Vandenbroeck, N. Vandenbroeck, H. Dekkers, H. Dekkers, X. P. Shi, X. P. Shi, J. Albert, J. Albert, C. L. Tan, C. L. Tan, J. Vertommen, J. Vertommen, B. Coenegrachts, B. Coenegrachts, I. Orain, I. Orain, Y. Kimura, Y. Kimura, V. Wiaux, V. Wiaux, W. Boullart, W. Boullart, } "15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850C (29 March 2013); doi: 10.1117/12.2011586; https://doi.org/10.1117/12.2011586

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years