29 March 2013 15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU
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Abstract
This paper discusses the approach for patterning 15nm Half Pitch (HP) structures using EUV lithography combined with Self-Aligned Double Patterning (SADP). A stack composed of a double hard mask, which allows decoupling photoresist transfer and trim, and an α-Si mandrel, which offers better mechanical properties during the mandrel and spacer patterning, is proposed. A break-down study with the patterning steps was performed to investigate the key contributors for improvement of LWR, LER and CDU, targeting integrated solutions with lithography, etch, thin film deposition, and wet cleans for selected applications. Based on the optimization of these key patterning contributors, optimum LWR, LER and CDU at 15nm HP are demonstrated.
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K. Xu, K. Xu, L. Souriau, L. Souriau, D. Hellin, D. Hellin, J. Versluijs, J. Versluijs, P. Wong, P. Wong, D. Vangoidsenhoven, D. Vangoidsenhoven, N. Vandenbroeck, N. Vandenbroeck, H. Dekkers, H. Dekkers, X. P. Shi, X. P. Shi, J. Albert, J. Albert, C. L. Tan, C. L. Tan, J. Vertommen, J. Vertommen, B. Coenegrachts, B. Coenegrachts, I. Orain, I. Orain, Y. Kimura, Y. Kimura, V. Wiaux, V. Wiaux, W. Boullart, W. Boullart, } "15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850C (29 March 2013); doi: 10.1117/12.2011586; https://doi.org/10.1117/12.2011586
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