29 March 2013 Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching
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Abstract
In this paper, we present a cut-process overlay yield model for self-aligned multiple patterning and study how its yield will be affected by the overlay errors and cut-hole overhang. A geometric model is developed to identify the yield-related structures and construct the probability-of-failure (POF) functions. A general formula to calculate the cut-process overlay yield is derived using the joint POF function. Our calculation results show that an optimal cut-hole overhang must be found in order to achieve the maximum yield. The scaling tendency of the cut-process overlay yield is also studied, and it is found to be a potential challenge when the half pitch of device features reaches 7nm. The yields of 4-mask 193i and single-mask EUV cut modules are also calculated for a comparison. Moreover, a post-lithography misalignment correction technique based on dry etching is proposed. A geometric tilted etching model is developed to predict the relation between the tilting angle of an etching process and the shifted distance of the etched structure’s mass center.
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Pan Zhang, Pan Zhang, Yijian Chen, Yijian Chen, } "Cut-process overlay yield model for self-aligned multiple patterning and a misalignment correction technique based on dry etching", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850K (29 March 2013); doi: 10.1117/12.2010584; https://doi.org/10.1117/12.2010584
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