Spin-on-carbon hardmask based on fullerene derivatives for high-aspect ratio etching

A. Frommhold; R. E. Palmer; A. P. G. Robinson

doi:10.1117/12.2011465

29 March 2013 Spin-on-carbon hardmask based on fullerene derivatives for high-aspect ratio etching

A. Frommhold, R. E. Palmer, A. P. G. Robinson

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850Q (2013) https://doi.org/10.1117/12.2011465
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The advance of lithographic resolution has made it necessary to adopt extremely thin photoresist films for the fabrication of ‘2x nm’ structures in order to mitigate problems such as resist collapse during development but limiting achievable etch depths at the same time. By using multilayer hardmask stacks a considerable increase in achievable aspect ratio is possible. We have previously presented a fullerene based spin-on carbon hardmask material capable of high aspect ratio etching. Here we report our latest findings in material characterization of one of the original, and one new, formulations. By using a higher adduct derivative fullerene the solubility in industry-friendly solvents and thermal stability could be improved. The etching performance and materials characteristics of the new higher adduct fullerene hardmask were found to be comparable to the original hardmask.

Citation Download Citation

A. Frommhold, R. E. Palmer, and A. P. G. Robinson "Spin-on-carbon hardmask based on fullerene derivatives for high-aspect ratio etching", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850Q (29 March 2013); https://doi.org/10.1117/12.2011465

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KEYWORDS

Etching

Silicon

Fullerenes

System on a chip

Carbon

Silicon films

Silicon carbide

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