29 March 2013 The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO2
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Abstract
Electronics advancement demands integration of large number of transistors /capacitors in a very small chip area. Thus, small feature size fabrication is a critical issue and precise fabrications of features under nano scale require advanced lithographic and etching techniques. In this paper, MOS capacitor with TiN metal-gate and HfO2 dielectric layer was fabricated in a world class clean-room lab in KTH. There, state-of-the art lithography stepper, advanced etching machines and all important clean-room fabrication facilities were used for successful fabrication of the nano-dimension MOS capacitor, whose detailed experimental procedures and results are exhaustively dealt in this report.
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Melkamu A. Belete, "The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO2", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850W (29 March 2013); doi: 10.1117/12.2020003; https://doi.org/10.1117/12.2020003
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