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31 March 1988 Structural Optical And Electrical Properties Of Thin Films InP-Ga0.47In0.53As Layered Structures Grown By LP-MOCVD
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Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943614
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Very high quality GaxInl_xAsyPl_y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3x1013cm-3, with Hall mobility as high as 6000 cm2V-1s- 1 300 K and 200.000 cm2V-1s-1 at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm2V-1s-1 at 300°K and 260.000 cm2V-1s-1 at 2°K with a carrier concentration of 3x1014cm-3 have been measured. The successful mono-layer epitaxy of Ga0.5In0 5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs) . The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.47In 0.53 As/InP system.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M Razeghi "Structural Optical And Electrical Properties Of Thin Films InP-Ga0.47In0.53As Layered Structures Grown By LP-MOCVD", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); https://doi.org/10.1117/12.943614
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