Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors

A. Miakonkikh; S. Lisovsky; M. Rudenko; K. Rudenko

doi:10.1117/12.2017556

3 January 2013 Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors

A. Miakonkikh, S. Lisovsky, M. Rudenko, K. Rudenko

Author Affiliations +

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870004 (2013) https://doi.org/10.1117/12.2017556
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The multiprobe Langmuir measurement on-wafer tool for microelectronics ICP reactors was developed. It allows measurements of electron temperature, ion concentration, plasma potential and floating potential directly on chuck. Homogeneity of He and Ar plasmas (electron temperature and negative ion concentration) were measured, and causes of different distribution patterns were discussed.

Citation Download Citation

A. Miakonkikh, S. Lisovsky, M. Rudenko, and K. Rudenko "Instrumented wafer as a Langmuir multiprobe tool for lateral plasma homogeneity measurements in processing plasma reactors", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870004 (3 January 2013); https://doi.org/10.1117/12.2017556

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