3 January 2013 Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870007 (2013) https://doi.org/10.1117/12.2017272
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
Metamorphic InхAl1–хAs buffer design influence on electrophysical and structural properties of the MHEMT nanoheterostructures was investigated. Electrophysical properties of the nanoheterostructures were characterized by Hall measurements, while the structural features were described with the help of transmission electron microscopy. The strained superlattices inserted in the metamorphic buffer are shown to filter threading dislocations preventing their penetration in active region. Moreover, the increase of period number in superlattices enhances such effect. Step-graded metamorphic buffer permitted to reach the minimal surface roughness with rather high electron mobility.
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S. S. Pushkarev, S. S. Pushkarev, G. B. Galiev, G. B. Galiev, E. A. Klimov, E. A. Klimov, D. V. Lavrukhin, D. V. Lavrukhin, I. S. Vasil'evskii, I. S. Vasil'evskii, R. M. Imamov, R. M. Imamov, I. A. Subbotin, I. A. Subbotin, O. M. Zhigalina, O. M. Zhigalina, V. G. Zhigalina, V. G. Zhigalina, P. A. Buffat, P. A. Buffat, B. Dwir, B. Dwir, E. I. Suvorova, E. I. Suvorova, } "Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As/GaAs", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870007 (3 January 2013); doi: 10.1117/12.2017272; https://doi.org/10.1117/12.2017272
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