3 January 2013 Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures
Author Affiliations +
Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870008 (2013) https://doi.org/10.1117/12.2016834
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiNx-Si3N4 and Si-SiO2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. A. Volodin, V. A. Volodin, S. A. Arzhannikova, S. A. Arzhannikova, A. A. Gismatulin, A. A. Gismatulin, G. N. Kamaev, G. N. Kamaev, A. Kh. Antonenko, A. Kh. Antonenko, S. G. Cherkova, S. G. Cherkova, A. G. Cherkov, A. G. Cherkov, S. A. Kochubei, S. A. Kochubei, A. A. Popov, A. A. Popov, S. Robert, S. Robert, H. Rinnert, H. Rinnert, M. Vergnat, M. Vergnat, } "Laser pulse crystallization and optical properties of Si/SiO2 and Si/Si3N4 multilayer nano-heterostructures", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870008 (3 January 2013); doi: 10.1117/12.2016834; https://doi.org/10.1117/12.2016834
PROCEEDINGS
10 PAGES


SHARE
Back to Top