8 January 2013 Noise characteristics of nanoscaled SOI MOSFETs
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000N (2013) https://doi.org/10.1117/12.2017358
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
The low-frequency noise behavior of nanoscaled fully-depleted silicon-on insulator (SOI) finFETs is investigated and the perspectives of the noise method as a non-destructive diagnostic tool are revealed. The analysis of the (1/f)γ McWhorter noise observed at zero back-gate voltage showed that the trap concentration Not appears to be lower in the case of devices with HfSiON/SiO2 gate dielectric with the uniaxial strain in the inversion channel while the implementation of the HfO2/SiO2 gate stack and the biaxial strain tend to increase the value of Not. The analysis of the back-gate-induced (BGI) and linear kink effect (LKE) Lorentzian noise observed when the back interface is biased in accumulation allowed to estimate the values proportional to equivalent capacitance Ceq. Their front-gate voltage dependencies appear to be different for the devices with HfSiON/SiO2 and HfO2/SiO2 gate dielectric. Also the values proportional to density of the electron-valence-band tunneling currents jEVB were found for the devices studied. The influence of the strain-inducing techniques and gate dielectric type on the values discussed is revealed.
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Nataliya Lukyanchikova, Nataliya Lukyanchikova, Nikolay Garbar, Nikolay Garbar, Valeriya Kudina, Valeriya Kudina, Alexander Smolanka, Alexander Smolanka, Eddy Simoen, Eddy Simoen, Cor Claeys, Cor Claeys, } "Noise characteristics of nanoscaled SOI MOSFETs", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000N (8 January 2013); doi: 10.1117/12.2017358; https://doi.org/10.1117/12.2017358
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