8 January 2013 Narrowing of nanogap for purpose of molecular single-electronics
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000O (2013) https://doi.org/10.1117/12.2017090
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
Electrodes for molecular transistor with the gaps between them within 5 nm width’s range were created. On the first step suspended electrodes-blanks with 30 nm gaps was fabricated with a standard bilayer mask technology and electron beam lithography. Then wet etching in a 6% solution of hydrofluoricacid buffered with hydrofluoride of ammonium makes possible to suspend these electrodes to prevent them from short-circuit at the step of additional evaporation of metal film. The efficiency of narrowing of the gap between source and drain electrodes (as a result of additional deposition of metal film on the preformed and suspended gap) was 50-70% of the deposited film thickness.
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I. V. Sapkov, I. V. Sapkov, E. S. Soldatov, E. S. Soldatov, "Narrowing of nanogap for purpose of molecular single-electronics ", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000O (8 January 2013); doi: 10.1117/12.2017090; https://doi.org/10.1117/12.2017090
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