8 January 2013 Mechanism of sensitivity of a three-collector magnetotransistor
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000Q (2013) https://doi.org/10.1117/12.2018388
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
The sensitivity of bipolar magnetotransistor with the base in the well - 3CBМТBW has been studied. A low velocity of surface recombination and an extraction of the injected electrons by a base–well р-n junction determined operating mode with a deviation of two flows of charge carriers has been established. The voltage magnetosensitivity (~11 V/T) has been determined.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Amelichev, V. V. Amelichev, A. A. Cheremisinov, A. A. Cheremisinov, S. A. Polomoshnov, S. A. Polomoshnov, R. D. Tikhonov, R. D. Tikhonov, } "Mechanism of sensitivity of a three-collector magnetotransistor", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000Q (8 January 2013); doi: 10.1117/12.2018388; https://doi.org/10.1117/12.2018388


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