8 January 2013 Mechanism of sensitivity of a three-collector magnetotransistor
Author Affiliations +
Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000Q (2013) https://doi.org/10.1117/12.2018388
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
The sensitivity of bipolar magnetotransistor with the base in the well - 3CBМТBW has been studied. A low velocity of surface recombination and an extraction of the injected electrons by a base–well р-n junction determined operating mode with a deviation of two flows of charge carriers has been established. The voltage magnetosensitivity (~11 V/T) has been determined.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Amelichev, V. V. Amelichev, A. A. Cheremisinov, A. A. Cheremisinov, S. A. Polomoshnov, S. A. Polomoshnov, R. D. Tikhonov, R. D. Tikhonov, } "Mechanism of sensitivity of a three-collector magnetotransistor", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000Q (8 January 2013); doi: 10.1117/12.2018388; https://doi.org/10.1117/12.2018388
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Structure of the Si-SiO2 interface
Proceedings of SPIE (April 08 1999)
Electrochemical process of n-Si photonic structure formation
Proceedings of SPIE (November 04 1999)
New concepts for light-emitting transistors
Proceedings of SPIE (October 18 2004)

Back to Top