8 January 2013 Mechanism of sensitivity of a three-collector magnetotransistor
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000Q (2013) https://doi.org/10.1117/12.2018388
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
The sensitivity of bipolar magnetotransistor with the base in the well - 3CBМТBW has been studied. A low velocity of surface recombination and an extraction of the injected electrons by a base–well р-n junction determined operating mode with a deviation of two flows of charge carriers has been established. The voltage magnetosensitivity (~11 V/T) has been determined.
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V. V. Amelichev, V. V. Amelichev, A. A. Cheremisinov, A. A. Cheremisinov, S. A. Polomoshnov, S. A. Polomoshnov, R. D. Tikhonov, R. D. Tikhonov, "Mechanism of sensitivity of a three-collector magnetotransistor", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000Q (8 January 2013); doi: 10.1117/12.2018388; https://doi.org/10.1117/12.2018388
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