8 January 2013 The mode matching technology for MEMS gyroscopes with mutually spaced eigenfrequencies
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000T (2013) https://doi.org/10.1117/12.2016784
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
Paper presents a new technology for silicon micromachined gyroscope mode matching with mutually spaced eigenfrequencies. The fabrication of gyroscope sensing element is based on double-sided deep reactive ion etching (DRIE) of standard silicon wafer and allows full 3D control of the gimbals and flexures geometry. The developed finite element model allows predicting dynamic characteristics of sensing element versus geometry of flexible suspension beams. Oxidation and successive wet etching of SiO2 layer lead to flexure geometry change (thinning). One-to-one correspondence of measured resonant frequencies and flexures geometry defines the oxidation depth. The mode matching condition is achieved by repeated oxidation-wet etching cycles.
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O. Morozov, A. Postnikov, I. Kozin, A. Soloviev, A. Tarasov, "The mode matching technology for MEMS gyroscopes with mutually spaced eigenfrequencies", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000T (8 January 2013); doi: 10.1117/12.2016784; https://doi.org/10.1117/12.2016784
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