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8 January 2013The mode matching technology for MEMS gyroscopes with mutually spaced eigenfrequencies
O. Morozov,1 A. Postnikov,1 I. Kozin,1 A. Soloviev,2 A. Tarasov2
1Institute of Physics and Technology, Yaroslavl Branch (Russian Federation) 2Federal State Unitary Enterprise “Ctr. for Ground-Based Space Infrastructure Facilities Operation" (Russian Federation)
Paper presents a new technology for silicon micromachined gyroscope mode matching with mutually spaced
eigenfrequencies. The fabrication of gyroscope sensing element is based on double-sided deep reactive ion etching
(DRIE) of standard silicon wafer and allows full 3D control of the gimbals and flexures geometry. The developed finite
element model allows predicting dynamic characteristics of sensing element versus geometry of flexible suspension
beams. Oxidation and successive wet etching of SiO2 layer lead to flexure geometry change (thinning). One-to-one
correspondence of measured resonant frequencies and flexures geometry defines the oxidation depth. The mode
matching condition is achieved by repeated oxidation-wet etching cycles.
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O. Morozov, A. Postnikov, I. Kozin, A. Soloviev, A. Tarasov, "The mode matching technology for MEMS gyroscopes with mutually spaced eigenfrequencies," Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000T (8 January 2013); https://doi.org/10.1117/12.2016784