8 January 2013 A universal model for single-electron device simulation
Author Affiliations +
Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870014 (2013) https://doi.org/10.1117/12.2016757
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Simulation of single-electron devices’ characteristics is one of the prior challenges in nanoelectronics today. The physical model for single-electron device simulation is described in the paper. Our model is based on the self-consistent numerical solution of the Poisson equation with using of Monte Carlo method or master equation. The developed model is modified for the case of account of spatial quantization. The following approximations of the quantum well are used: of the quantum well of infinite depth; of the rectangular quantum well of finite depth; of the parabolic quantum well. The model enables obtaining single-electron devices IV-characteristics changing as a function of parameters of material and design. The programs, implementing the suggested model, were included into the simulation system of nanoelectronic devices NANODEV [1-3] developed for personal computers. The developed model makes it possible to simulate devices of four types: metal, semiconductor, composite and organic ones. Besides, it can be successfully used for simulation of both single- and multi-island single-electron devices. Thus, the proposed model is a universal one. The results of simulation according to the developed model with account of spatial quantization are presented in the paper.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. I. Abramov, I. I. Abramov, Alexander L. Baranoff, Alexander L. Baranoff, Irina A. Romanova, Irina A. Romanova, I. Y. Shcherbakova, I. Y. Shcherbakova, "A universal model for single-electron device simulation", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870014 (8 January 2013); doi: 10.1117/12.2016757; https://doi.org/10.1117/12.2016757

Back to Top