8 January 2013 Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals
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Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 870017 (2013) https://doi.org/10.1117/12.2017306
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir55 nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 1011 Hz and size of 32x32x12 nm3. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate UG is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir55 is 1.5 * 10-5 A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is Kq = 1, and the power gain is equal to KP ~ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ~ 104 W/cm2.
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Valery A. Zhukov, Valery A. Zhukov, V. G. Maslov, V. G. Maslov, "Numerical model of parallel nano-FET on Coulomb blockade in M55 "magic" crystals", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 870017 (8 January 2013); doi: 10.1117/12.2017306; https://doi.org/10.1117/12.2017306

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