28 June 2013 Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010A (2013) https://doi.org/10.1117/12.2027201
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
The detection and management of mask defects which are transferred onto wafer becomes more important day by day. As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO) with Optical Proximity Correction (OPC). To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to detect. We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630 MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1]. In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing assessment. Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects and can judge whether repairs of defects would be required. Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630 MVM-SEM® and 3D lithography simulation.
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Keisuke Ito, Tsutomu Murakawa, Naoki Fukuda, Soichi Shida, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura, Shohei Matsushita, Kazuyuki Hagiwara, Daisuke Hara, "Photomask quality evaluation using lithography simulation and multi-detector MVM-SEM", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010A (28 June 2013); doi: 10.1117/12.2027201; https://doi.org/10.1117/12.2027201
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