28 June 2013 Exploring probability of shallow ML defect impact to defect assurance
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010Q (2013) https://doi.org/10.1117/12.2031845
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
EUV blank defect is one of the key issues the industry has to overcome to implement EUV lithography for HVM (high volume manufacturing). Several inspection techniques for EUV blank defect detection have been proposed, but the blank defect criteria for EUV mask is assumed to be very tight, thus, high sensitivity performance is required for blank inspection. However, it is important how the blank inspection tool to be assessed with appropriate test blanks with properly characterized defects. New programmed defect fabrication method has been introduced and verified that the method enables to fabricate natural-like programmed defects. In this study, it was attempted to fabricate more complex shape defects and investigated how multilayer defects are grown during multilayer deposition. Then, printability simulation was conducted for 3 different defect transition models, and critical multilayer defect shapes and sizes were discussed based on the simulation work.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuaki Matsui, Noriaki Takagi, Satoshi Takahashi, Yutaka Kodera, Yo Sakata, and Shinji Akima "Exploring probability of shallow ML defect impact to defect assurance", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010Q (28 June 2013); doi: 10.1117/12.2031845; https://doi.org/10.1117/12.2031845
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