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28 June 2013Exploring probability of shallow ML defect impact to defect assurance
EUV blank defect is one of the key issues the industry has to overcome to implement EUV lithography for HVM
(high volume manufacturing). Several inspection techniques for EUV blank defect detection have been proposed, but the
blank defect criteria for EUV mask is assumed to be very tight, thus, high sensitivity performance is required for blank
inspection. However, it is important how the blank inspection tool to be assessed with appropriate test blanks with
properly characterized defects. New programmed defect fabrication method has been introduced and verified that the
method enables to fabricate natural-like programmed defects. In this study, it was attempted to fabricate more complex
shape defects and investigated how multilayer defects are grown during multilayer deposition. Then, printability
simulation was conducted for 3 different defect transition models, and critical multilayer defect shapes and sizes were
discussed based on the simulation work.
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Kazuaki Matsui, Noriaki Takagi, Satoshi Takahashi, Yutaka Kodera, Yo Sakata, Shinji Akima, "Exploring probability of shallow ML defect impact to defect assurance," Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010Q (28 June 2013); https://doi.org/10.1117/12.2031845