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28 June 2013 EUV reticle inspection with a 193nm reticle inspector
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010W (2013)
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
The prevailing industry opinion is that EUV Lithography (EUVL) will enter High Volume Manufacturing (HVM) in the 2015 – 2017 timeframe at the 16nm HP node. Every year the industry assesses the key risk factors for introducing EUVL into HVM – blank and reticle defects are among the top items. To reduce EUV blank and reticle defect levels, high sensitivity inspection is needed. To address this EUV inspection need, KLA-Tencor first developed EUV blank inspection and EUV reticle inspection capability for their 193nm wavelength reticle inspection system – the Teron 610 Series (2010). This system has become the industry standard for 22nm / 3xhp optical reticle HVM along with 14nm / 2xhp optical pilot production; it is further widely used for EUV blank and reticle inspection in R and D. To prepare for the upcoming 10nm / 1xhp generation, KLA-Tencor has developed the Teron 630 Series reticle inspection system which includes many technical advances; these advances can be applied to both EUV and optical reticles. The advanced capabilities are described in this paper with application to EUV die-to-database and die-to-die inspection for currently available 14nm / 2xhp generation EUV reticles. As 10nm / 1xhp generation optical and EUV reticles become available later in 2013, the system will be tested to identify areas for further improvement with the goal to be ready for pilot lines in early 2015.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William Broadbent, Gregg Inderhees, Tetsuya Yamamoto, Isaac Lee, and Phillip Lim "EUV reticle inspection with a 193nm reticle inspector", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010W (28 June 2013);


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