28 June 2013 Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870114 (2013) https://doi.org/10.1117/12.2029882
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
EUV wavelength inspection tools are several years away from product release. Until then, the EUV Lithography (EUVL) community faces the challenge of inspecting EUV masks at non-actinic wavelengths. It is critical to understand how to improve mask inspectability and defect sensitivity. The absorber stack is one contributor, since changing the film stack modifies image contrast. To study the effect, masks were fabricated from three different film stacks on which the thickness of the low reflective and absorber layers vary. These three absorbers are identified in this paper as Type A, Type B and Type C. All blanks had the same Ru-capped multi-layer substrate beneath the absorber stack. Inspection contrast, defect sensitivity and inspectability were measured on a 193nm wavelength inspection tool. The focus of this paper will be on inspection at the 193nm wavelength; however, simulated wafer results at the 13.5 nm EUV exposure wavelength will be included to anchor the relevance of the mask inspection results. A comparison of the different absorber stacks, the ability to detect defects on the various masks, and how defects on these substrates prints on wafer will be provided. This work addresses the gap between EUVL mask inspection and wafer defect printability and how the two views differ relative to various absorber stacks.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen Badger, Emily Gallagher, Kazunori Seki, Gregory McIntyre, Toshio Konishi, Yutaka Kodera, and Vincent Redding "Evaluation of non-actinic EUV mask inspection and defect printability on multiple EUV mask absorbers", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870114 (28 June 2013); doi: 10.1117/12.2029882; https://doi.org/10.1117/12.2029882
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