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28 June 2013 Extending DUV mask inspection tool for inspecting 2xnm HP and beyond
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870115 (2013) https://doi.org/10.1117/12.2032774
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
Advanced 193nm DUV optical inspection tools that can cover 2Xnm HP node become more important and they are being tested to estimate their extendibility. We report DUV based inspection results evaluated and compared to wafer prints, as well as mask CD-SEM images in order to determine the size of printable defects that must be detected in each device node. Applied Materials® advanced Aera™ optical mask inspection tool that adapted a new optical technology enhancement was utilized to evaluate its inspection capability. The illumination conditions and pixel size were optimized to increase inspection sensitivity and reach detection requirements for not only critical defects that print on the wafer but also non-printing defects that indicate to a mask issue. Simulation was used to study suitable optical illumination conditions analyzing results to achieve the best performance for high-end EUV mask inspection toward next generation lithography.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jihoon Na, Sang Hoon Han, Gisung Yoon, Dong Hoon Chung, Byung-Gook Kim, Chanuk Jeon, Dana Bernstein, Lior Shoval, Ido Dolev, Ofer Shopen, Ju Sang Lee, Chung ki Lyu, and Seung Ryong Bae "Extending DUV mask inspection tool for inspecting 2xnm HP and beyond", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870115 (28 June 2013); https://doi.org/10.1117/12.2032774
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