28 June 2013 Pattern inspection performance of novel Projection Electron Microscopy (PEM) on EUV masks
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870116 (2013) https://doi.org/10.1117/12.2030653
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
EUV lithography with 13.5 nm exposure wavelength, because of its excellent resolution, is a leading candidate for the next-generation lithography for 16 nm half pitch (hp) node devices, and beyond. High-sensitivity EUV mask pattern defect detection is one of the major issues to realize device fabrication with EUV lithography. In order to achieve inspection sensitivity and attainability for 1X node, a projection electron microscopy (PEM) system is employed that enables us to do high-speed/ high-resolution inspection that is not possible with the conventional DUV or EB inspection systems. By selecting a higher electron energy in imaging by using Electron Optics (EO) exposure, and by applying a newly designed model to a basic PEM optics model, we have minimized the aberration in imaging that occurs when working with EO; and we have improved the related transmittance of such a system. Experimental results by showing designs for the improved transmittance were obtained by making electron throughput measurement. To guarantee the quality of the 16 nm node EUV mask, corresponding sized programmed defects on masks were designed, and a PEM system for defect detection was evaluated by using the developed EO.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryoichi Hirano, Ryoichi Hirano, Susumu Iida, Susumu Iida, Tsuyoshi Amano, Tsuyoshi Amano, Tsuneo Terasawa, Tsuneo Terasawa, Hidehiro Watanabe, Hidehiro Watanabe, Masahiro Hatakeyama, Masahiro Hatakeyama, Takeshi Murakami, Takeshi Murakami, Kenji Terao, Kenji Terao, "Pattern inspection performance of novel Projection Electron Microscopy (PEM) on EUV masks", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870116 (28 June 2013); doi: 10.1117/12.2030653; https://doi.org/10.1117/12.2030653

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