7 August 2013 Background level analysis on an actinic inspection image of EUVL mask blank
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870117 (2013) https://doi.org/10.1117/12.2031583
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
Background level (BGL) of an actinic inspection image was analyzed. Backgrounds are referred to the lights scattered by the surface roughness of a mask blank, and BGL variations are attributed to tool-factors and mask-factors. The BGL variation due to the mask-factors was reproduced by simulation using the surface information obtained by AFM measurement. As a result of comparison between the experimental and simulated BGL intensities, the stacking structure was estimated to be the surface model; and the AFM measurement reflected only the roughness of the capping layer. Using the estimated stacking structure, mask surface roughness of 85 pm and 0.2 nm at rms was required for 11 nm and 16 nm nodes in the case of the surface model.
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Takeshi Yamane, Myoungsoo Lee, Tsuneo Terasawa, "Background level analysis on an actinic inspection image of EUVL mask blank", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870117 (7 August 2013); doi: 10.1117/12.2031583; https://doi.org/10.1117/12.2031583
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