22 January 2013 Simplified thermal analysis of impact of diamond heat spreader on InGaN laser diode arrays
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Proceedings Volume 8702, Laser Technology 2012: Progress in Lasers; 87020D (2013) https://doi.org/10.1117/12.2012051
Event: Tenth Symposium on Laser Technology, 2012, Szczecin, Poland
Abstract
This paper shows results obtained by simplified thermal modeling of one-dimensional laser arrays designed based on a single InGaN edge-emitting laser diode. Laser arrays were designed using 2 – 7 emitters with a pitch ranging from 10 μm to 70 μm. Heat flux calculations using three-dimensional finite-element analysis have been undertaken for the evaluation of efficiency of diamond heat spreader applied to these devices. An impact of size (thickness, length, width) of diamond heat spreaders on maximal temperature increase in active region of designed epi-up and epi-down laser diode arrays has been determined.
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Konrad Jawulski, Maciej Kuc, Robert P. Sarzala, "Simplified thermal analysis of impact of diamond heat spreader on InGaN laser diode arrays", Proc. SPIE 8702, Laser Technology 2012: Progress in Lasers, 87020D (22 January 2013); doi: 10.1117/12.2012051; https://doi.org/10.1117/12.2012051
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