Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes

Shubhashish Datta; Abhay Joshi; Jim Rue

doi:10.1117/12.2015609

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11 June 2013 Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes

Shubhashish Datta, Abhay Joshi, Jim Rue

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 870408 (2013) https://doi.org/10.1117/12.2015609
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.

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Shubhashish Datta, Abhay Joshi, and Jim Rue "Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870408 (11 June 2013); https://doi.org/10.1117/12.2015609

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