Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes

Shubhashish Datta; Abhay Joshi; Jim Rue

doi:10.1117/12.2015609

11 June 2013 Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes

Shubhashish Datta; Abhay Joshi; Jim Rue

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 870408 (2013) https://doi.org/10.1117/12.2015609
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.

Citation Download Citation

Shubhashish Datta, Shubhashish Datta, Abhay Joshi, Abhay Joshi, Jim Rue, Jim Rue, } "Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870408 (11 June 2013); doi: 10.1117/12.2015609; https://doi.org/10.1117/12.2015609

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