11 June 2013 High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices
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Abstract
We report a bias selectable dual-band mid-wave infrared (MWIR) and long-wave infrared (LWIR) co-located detector with 3 μm active region thickness per channel that is highly selective and can perform under high operating temperatures for the MWIR band. Under back-side illumination, a temperature evolution study of the MWIR detector’s electro-optical performance found the 300 K background-limit with 2π field-of-view to be achieved below operating temperatures of 160 K, at which the temperature’s 50% cutoff wavelength was 5.2 μm. The measured current reached the system limit of 0.1 pA at 110 K for 30 μm pixel-sized diodes. At 77 K, where the LWIR channel operated with a 50% cutoff wavelength at 11.2 μm, an LWIR selectivity of ∼17% was achieved in the MWIR wave band between 3 and 4.7 μm, making the detector highly selective.
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M. Razeghi, A. Haddadi, A. M. Hoang, G. Chen, S. Ramezani-Darvish, P. Bijjam, "High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040S (11 June 2013); doi: 10.1117/12.2019147; https://doi.org/10.1117/12.2019147
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